R6524KNZC8
MOSFET N-CH 650V 24A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6524KNZC8 is a 650V N-Channel MOSFET designed for demanding applications. This component features a continuous drain current of 24A at 25°C and a maximum power dissipation of 74W (Tc). The Rds On is specified at a maximum of 185mOhm at 11.3A and a Vgs of 10V. Key electrical characteristics include a Vgs(th) of 5V at 750µA and a gate charge (Qg) of 45 nC at 10V. The input capacitance (Ciss) is a maximum of 1850 pF at 25V. Operating at junction temperatures up to 150°C, this MOSFET is housed in a TO-3PF package, facilitating through-hole mounting. This device is suitable for use in power supply, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 750µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V |
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