R6524ENZC8
MOSFET N-CH 650V 24A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6524ENZC8 is an N-Channel power MOSFET designed for demanding applications. This component features a 650V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 24A at 25°C (Tc), with a maximum power dissipation of 74W (Tc). The Rds On (Max) is specified at 185mOhm at 11.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 70 nC @ 10V and input capacitance (Ciss) of 1650 pF @ 25V. The R6524ENZC8 utilizes Metal Oxide technology and is housed in a TO-3PF package for through-hole mounting. This device is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 750µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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