R6520KNZC8
MOSFET N-CH 650V 20A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number R6520KNZC8. This power MOSFET features a 650 V drain-to-source voltage and a continuous drain current of 20 A at 25°C (Tc). The Rds On is specified at a maximum of 205 mOhm under 9.5 A and 10 V Vgs. The device is housed in a TO-3PF (TO-3P-3 Full Pack) through-hole package, offering a maximum power dissipation of 68 W (Tc) and an operating junction temperature of 150°C. Key parameters include 40 nC maximum gate charge and 1550 pF input capacitance. This component is suitable for applications in power switching and conversion across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 630µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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