R6520ENZC8
MOSFET N-CH 650V 20A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6520ENZC8 is a 650V N-Channel MOSFET designed for high-voltage applications. This component features a continuous drain current rating of 20A at 25°C (Tc) and a maximum power dissipation of 68W (Tc). With a drain-to-source voltage (Vdss) of 650V, it is suitable for power switching in various industrial sectors including power supplies, motor control, and lighting. The R6520ENZC8 offers a low on-resistance (Rds On) of 205mOhm at 9.5A, 10V, and a gate charge (Qg) of 61 nC at 10V. It utilizes Metal Oxide technology and is housed in a TO-3PF package for through-hole mounting. The operating temperature range is up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 630µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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