R6515KNZC8
MOSFET N-CH 650V 15A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number R6515KNZC8, is designed for demanding power applications. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain Current (Id) of 15A at 25°C (Tc), with a maximum power dissipation of 60W (Tc). The Rds On is specified at a maximum of 315mOhm at 6.5A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 27.5 nC (Max) at 10V and Input Capacitance (Ciss) of 1050 pF (Max) at 25V. The MOSFET operates at junction temperatures up to 150°C. This component is housed in a TO-3PF (TO-3P-3 Full Pack) through-hole package. It finds application in power supplies, motor control, and lighting systems within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 315mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 430µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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