R6515ENZC8
MOSFET N-CH 650V 15A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor R6515ENZC8 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 650V Drain-to-Source Voltage (Vdss) and a continuous drain current of 15A at 25°C (Tc). The Rds(on) is specified at a maximum of 315mOhm at 6.5A and 10V gate drive voltage. With a maximum power dissipation of 60W (Tc), the R6515ENZC8 is suitable for demanding power conversion circuits. Key parameters include a gate charge (Qg) of 40nC at 10V and input capacitance (Ciss) of 910pF at 25V. The MOSFET is housed in a TO-3PF package, facilitating through-hole mounting. This device finds application in power supplies, industrial motor control, and lighting systems. The maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 315mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 430µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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