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R6507KNXC7G

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R6507KNXC7G

650V 7A TO-220FM, HIGH-SPEED SWI

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 7A (Ta) 46W (Tc) Through Hole TO-220FM

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs665mOhm @ 2.4A, 10V
FET Feature-
Power Dissipation (Max)46W (Tc)
Vgs(th) (Max) @ Id5V @ 200µA
Supplier Device PackageTO-220FM
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 25 V

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