R6502END3TL1
650V 1.7A TO-252, LOW-NOISE POWEManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 1.7A (Tc) 26W (Tc) Surface Mount TO-252
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 40µA |
| Supplier Device Package | TO-252 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 25 V |
| Qualification | - |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
