R6076MNZ1C9
MOSFET N-CHANNEL 600V 76A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6076MNZ1C9 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C (Tc). With a low on-resistance (Rds On) of 55mOhm at 38A and 10V (Vgs), it offers efficient power handling with a maximum power dissipation of 740W (Tc). The MOSFET includes a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 7000 pF at 25V, suitable for demanding switching applications. The R6076MNZ1C9 is housed in a TO-247-3 package, facilitating through-hole mounting. Its robust design, with an operating temperature range of -55°C to 150°C (TJ), makes it appropriate for use in power supply, motor control, and industrial power conversion sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 740W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 25 V |
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