R6076ENZ1C9
MOSFET N-CH 600V 76A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6076ENZ1C9 is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 76A at 25°C (Tc), with a maximum power dissipation of 120W (Tc). The Rds On (Max) is rated at 42mOhm at 44.4A and 10V, with a gate drive voltage of 10V. Key parameters include a Gate Charge (Qg) of 260 nC at 10V and an input capacitance (Ciss) of 6500 pF at 25V. The device operates at an ambient temperature of up to 150°C (TJ) and is housed in a standard TO-247-3 package for through-hole mounting. Its robust specifications make it suitable for use in industrial power supplies, electric vehicle charging systems, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 44.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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