R6047ENZ1C9
MOSFET N-CH 600V 47A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor R6047ENZ1C9 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 600V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 47A at 25°C (Tc). The Rds On is specified at a maximum of 72mOhm at 25.8A and 10V Vgs. With a maximum power dissipation of 120W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for demanding power conversion and control circuits. Key parameters include a 145 nC gate charge (Qg) and 3850 pF input capacitance (Ciss). The device is housed in a TO-247 package for through-hole mounting. This component finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 25.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
QS6U22TR
MOSFET P-CH 20V 1.5A TSMT6
R6020YNXC7G
600V 12A TO-220FM, FAST SWITCHIN
