R6046FNZC8
MOSFET N-CH 600V 46A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6046FNZC8 is an N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 46A at 25°C (Tc), with a maximum power dissipation of 130W (Tc). The Rds On is specified at 93mOhm maximum at 23A and 10V Vgs. The device operates within a junction temperature range of 150°C (TJ) and is housed in a TO-3PF package with a through-hole mounting type. Key electrical parameters include a gate charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 6100 pF at 25V. This MOSFET technology is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 93mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
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