R6046FNZ1C9
MOSFET N-CH 600V 46A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6046FNZ1C9 is an N-Channel MOSFET designed for high-voltage applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 46A at 25°C. The Rds On is specified at a maximum of 98mOhm at 23A and 10V gate drive. With a maximum junction temperature of 150°C and a power dissipation of 120W (Tc), it is suitable for demanding power conversion and control circuits. Key parameters include a maximum gate charge of 150 nC at 10V and input capacitance (Ciss) of 6230 pF at 25V. This device is commonly utilized in power supply units, industrial motor control, and electric vehicle charging systems. The component is packaged in a TO-247-3 case.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6230 pF @ 25 V |
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