R6046ANZC8
MOSFET N-CH 600V 46A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor R6046ANZC8 is a 600 V N-Channel MOSFET in a TO-3PF package. This device offers a continuous drain current of 46A at 25°C (Tc) and a maximum power dissipation of 130W (Tc). Key electrical characteristics include a drain-to-source breakdown voltage (Vdss) of 600 V, a maximum on-resistance (Rds On) of 81mOhm at 23A and 10V gate drive, and a gate charge (Qg) of 150 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 6000 pF at 25 V. This through-hole mounted component operates up to a junction temperature of 150°C and is suitable for applications in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
Request a Quote
Clients Also Buy
2SK2463T100
MOSFET N-CH 60V 2A MPT3
RSJ300N10TL
MOSFET N-CH 100V 30A LPTS
RSS060P05FU6TB
MOSFET P-CH 45V 6A 8SOP
