R6046ANZ1C9
MOSFET N-CH 600V 46A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6046ANZ1C9 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 46A at 25°C. The Rds(on) is specified at a maximum of 90mOhm at 23A and 10V gate drive. With a maximum power dissipation of 120W (Tc) and an operating temperature of 150°C (TJ), it is suitable for demanding power conversion and switching applications. Key characteristics include an input capacitance (Ciss) of 6000pF at 25V and a gate charge (Qg) of 150nC at 10V. The device is housed in a standard TO-247-3 package, facilitating through-hole mounting. This MOSFET is commonly utilized in power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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