R6035KNZC8
MOSFET N-CHANNEL 600V 35A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6035KNZC8 is a 600V N-Channel power MOSFET designed for high-efficiency switching applications. This device features a continuous drain current rating of 35A at 25°C (Tc) and a maximum power dissipation of 102W (Tc). It offers a low on-resistance of 102mOhm at 18.1A and 10V, with a gate threshold voltage (Vgs(th)) of 5V at 1mA. The R6035KNZC8 exhibits a gate charge (Qg) of 72 nC at 10V and an input capacitance (Ciss) of 3000 pF at 25V. Packaged in a TO-3PF (TO-3P-3 Full Pack) through-hole configuration, this MOSFET is suitable for use in power supplies, motor control, and industrial automation. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 18.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 102W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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