R6035ENZC8
MOSFET N-CH 600V 35A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6035ENZC8 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 35A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 102mOhm at 18.1A and 10V drive voltage. With a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 2720 pF at 25V, it offers efficient switching characteristics. The R6035ENZC8 is housed in a TO-3PF package, suitable for through-hole mounting and capable of dissipating up to 120W (Tc). This MOSFET is utilized in power supply units, motor control, and industrial power systems. The maximum operating junction temperature is 150°C, with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 18.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2720 pF @ 25 V |
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