R6035ENZ1C9
MOSFET N-CH 600V 35A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6035ENZ1C9 is a 600V N-Channel MOSFET designed for high-power applications. This component features a continuous drain current (Id) of 35A at 25°C and a maximum power dissipation of 120W (Tc). The Rds On is specified at a maximum of 102mOhm at 18.1A and 10V gate drive. Key parameters include a gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 2720 pF at 25V. The device is housed in a TO-247-3 package for through-hole mounting and operates at a junction temperature up to 150°C. This MOSFET technology is prevalent in power supply units, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 102mOhm @ 18.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2720 pF @ 25 V |
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