R6030KNZC8
MOSFET N-CHANNEL 600V 30A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6030KNZC8 is an N-Channel MOSFET designed for demanding power applications. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). The Rds On is specified at a maximum of 130mOhm at 14.5A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 2350 pF at 25V. Housed in a TO-3PF package, this through-hole mounted device offers a maximum power dissipation of 86W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 25 V |
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