R6030KNZ1C9
MOSFET N-CHANNEL 600V 30A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6030KNZ1C9 is an N-Channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 305W (Tc). The Rds(on) is specified at a maximum of 130mOhm when measured at 14.5A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 2350 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). This MOSFET utilizes Metal Oxide technology and is housed in a TO-247-3 package, suitable for through-hole mounting. It finds application in power supply units, power factor correction (PFC) circuits, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 305W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 25 V |
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