R6030JNZC8
MOSFET N-CH 600V 30A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6030JNZC8 is a 600V N-Channel MOSFET, designed for high-voltage power switching applications. This component features a continuous drain current capability of 30A at 25°C and a maximum power dissipation of 93W. The Rds On is specified at 143mOhm maximum at 15A and 15V gate drive. Key parameters include a gate charge (Qg) of 74 nC maximum at 15V and input capacitance (Ciss) of 2500 pF maximum at 100V. The MOSFET is housed in a TO-3PF package for through-hole mounting, with an operating temperature range of -55°C to 150°C. This device is suitable for use in power supplies, industrial automation, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 143mOhm @ 15A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 7V @ 5.5mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 100 V |
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