R6030ENZC8
MOSFET N-CH 600V 30A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6030ENZC8 is a 600V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current capability of 30A (Tc) with a maximum power dissipation of 120W (Tc). The Rds On is specified at a maximum of 130mOhm at 14.5A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 85 nC (Max) at 10V and input capacitance (Ciss) of 2100 pF (Max) at 25V. Operating at a maximum junction temperature of 150°C, the R6030ENZC8 is housed in a TO-3PF package, suitable for through-hole mounting. This MOSFET is utilized in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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