R6030ENZ1C9
MOSFET N-CH 600V 30A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Rohm Semiconductor R6030ENZ1C9 is an N-Channel MOSFET featuring a Drain-Source voltage (Vdss) of 600 V. This device offers a continuous drain current (Id) of 30 A at 25°C (Tc) and a maximum power dissipation of 120 W (Tc). With a low on-resistance (Rds On) of 130 mOhm at 14.5 A and 10 V, it is suitable for applications requiring efficient power switching. The device has a gate charge (Qg) of 85 nC at 10 V and an input capacitance (Ciss) of 2100 pF at 25 V. Operating at junction temperatures up to 150°C, the R6030ENZ1C9 is housed in a TO-247-3 package for through-hole mounting. This component is utilized in power supplies, industrial automation, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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