R6030ENX
MOSFET N-CH 600V 30A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6030ENX is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current capability of 30A at 25°C and a maximum power dissipation of 40W, making it suitable for demanding power supply designs, industrial automation, and electric vehicle systems. The R6030ENX offers a low on-resistance of 130mOhm (max) at 14.5A and 10V gate drive. Key electrical parameters include a gate charge of 85nC (max) at 10V and an input capacitance of 2100pF (max) at 25V. The device is housed in a TO-220FM package with a through-hole mounting type, ensuring robust thermal performance up to 150°C junction temperature.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
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