R6025JNZC8
MOSFET N-CH 600V 25A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6025JNZC8 is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 25 A at 25°C. The Rds On is rated at a maximum of 182 mOhm at 12.5 A and 15 V gate drive. With a maximum power dissipation of 85 W at the case temperature, this MOSFET is suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 57 nC at 15 V and input capacitance (Ciss) of 1900 pF at 100 V. The device is housed in a TO-3PF package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BagDownload Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 12.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 7V @ 4.5mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 100 V |
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