R6025ANZFU7C8
MOSFET N-CH 600V 25A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6025ANZFU7C8 is a high-performance N-Channel MOSFET designed for demanding applications. This TO-3PF packaged device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 25A at 25°C, with a maximum power dissipation of 150W. The R6025ANZFU7C8 offers a low on-resistance (Rds On) of 150mOhm at 12.5A and 10V, supported by a gate charge (Qg) of 88nC at 10V. Input capacitance (Ciss) is rated at 3250pF at 10V. This component is suitable for through-hole mounting and operates at junction temperatures up to 150°C. The R6025ANZFU7C8 finds application in power supply units, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 10 V |
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