R6025ANZFL1C8
MOSFET N-CH 600V 25A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6025ANZFL1C8 is a 600V N-channel MOSFET designed for high-power applications. This component offers a continuous drain current of 25A (Tc) and a maximum power dissipation of 150W (Tc). Featuring a low on-resistance of 150mOhm at 12.5A and 10V gate-source voltage, it ensures efficient power transfer. Key electrical characteristics include a gate charge of 88 nC (max) at 10V and an input capacitance (Ciss) of 3250 pF (max) at 10V. The R6025ANZFL1C8 is housed in a TO-3PF package, suitable for through-hole mounting and operation up to a junction temperature of 150°C. This device finds application in power supply units, motor control, and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 10 V |
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