R6024ENZC8
MOSFET N-CH 600V 24A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6024ENZC8 is a 600V N-Channel MOSFET designed for high-power applications. This component features a continuous drain current of 24A (Tc) at 25°C and a maximum power dissipation of 120W (Tc). The drain-to-source voltage (Vdss) is rated at 600V, with a typical gate charge (Qg) of 70 nC at 10V. Input capacitance (Ciss) is a maximum of 1650 pF at 25V. The on-resistance (Rds On) is 165mOhm maximum at 11.3A and 10V. This through-hole device is housed in a TO-3PF package and operates at temperatures up to 150°C (TJ). It is commonly utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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