R6024ENZ1C9
MOSFET N-CH 600V 24A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6024ENZ1C9 is an N-Channel Power MOSFET designed for demanding power applications. This component features a 600V drain-source breakdown voltage and a continuous drain current capability of 24A at 25°C, with a maximum power dissipation of 120W (Tc). The Rds(on) is specified at 165mOhm maximum for an Id of 11.3A and Vgs of 10V, utilizing a 10V drive voltage. Key parameters include a gate charge of 70nC (max) at 10V and input capacitance (Ciss) of 1650pF (max) at 25V. The device operates at a junction temperature up to 150°C. Housed in a TO-247-3 package, this through-hole mounted MOSFET is suitable for high-power switching applications across industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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