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R6024ENX

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R6024ENX

MOSFET N-CH 600V 24A TO220FM

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor R6024ENX is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 24A at 25°C. The Rds On (Max) is specified at 165mOhm at 11.3A and 10V gate drive. With a maximum power dissipation of 40W (Tc), this device is suitable for demanding power management tasks. Key parameters include a Gate Charge (Qg) of 70 nC @ 10V and an Input Capacitance (Ciss) of 1650 pF @ 25V. The R6024ENX utilizes Metal Oxide MOSFET technology and is presented in a TO-220FM package for through-hole mounting. It operates at temperatures up to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This device finds application in power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs165mOhm @ 11.3A, 10V
FET Feature-
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220FM
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 25 V

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