R6021ANZC8
MOSFET N-CH 650V 35A TO PKGManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6021ANZC8 is a high-voltage N-channel Power MOSFET designed for demanding applications. This device offers robust performance with a breakdown voltage of 650V and a continuous drain current capability of 35A. Its TO-247 package ensures efficient thermal management, making it suitable for power conversion circuits in industrial power supplies, electric vehicle charging systems, and solar inverters. Engineered for reliability and efficiency in high-power switching applications, this MOSFET provides excellent performance characteristics for advanced power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Operating Temperature | - |
| Technology | - |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
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