R6020KNZC8
MOSFET N-CHANNEL 600V 20A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6020KNZC8 is an N-channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) capability of 20A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 196mOhm at 9.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 40nC (max) at 10V and an input capacitance (Ciss) of 1550pF (max) at 25V. With a maximum power dissipation of 68W (Tc) and operating temperature range from -55°C to 150°C, the R6020KNZC8 is housed in a TO-3PF package for through-hole mounting. This MOSFET is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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