R6020KNZ1C9
MOSFET N-CH 600V 20A TO247Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6020KNZ1C9 is a 600V N-Channel MOSFET designed for demanding power applications. This component features a continuous drain current of 20A at 25°C and a maximum power dissipation of 231W at the same temperature. The low on-resistance is specified at 196mOhm at 9.5A and 10V gate drive. Key electrical parameters include a gate charge of 40nC at 10V and input capacitance (Ciss) of 1550pF at 25V. The R6020KNZ1C9 utilizes through-hole mounting in a standard TO-247-3 package, ensuring robust thermal management. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 231W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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