R6020JNZC8
MOSFET N-CH 600V 20A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor MOSFET N-CH 600V 20A TO3PF, part number R6020JNZC8, is a high-voltage N-channel power MOSFET designed for demanding power conversion applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 20A at 25°C (Tc). With a maximum Power Dissipation of 76W (Tc) and a low on-resistance of 234mOhm @ 10A, 15V, it ensures efficient operation. The device utilizes advanced MOSFET technology, offering key parameters such as a Gate Charge (Qg) of 45 nC @ 15 V and Input Capacitance (Ciss) of 1500 pF @ 100 V. The R6020JNZC8 is housed in a robust TO-3PF package, suitable for through-hole mounting, and operates across an extended temperature range of -55°C to 150°C (TJ). This component is commonly employed in power supplies, inverters, and motor control systems across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 234mOhm @ 10A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 76W (Tc) |
| Vgs(th) (Max) @ Id | 7V @ 3.5mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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