R6020ENX
MOSFET N-CH 600V 20A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6020ENX is an N-Channel MOSFET designed for power switching applications. This component features a Drain-Source Voltage (Vds) of 600V and a continuous Drain Current (Id) of 20A at 25°C. The Rds On (Max) is specified at 196mOhm at 10A and 10V gate-source voltage. With a maximum power dissipation of 50W (Tc), it is suitable for demanding thermal environments. The device utilizes MOSFET technology and comes in a TO-220FM package for through-hole mounting. Key parameters include a Gate Charge (Qg) of 60 nC at 10V and an Input Capacitance (Ciss) of 1400 pF at 25V. This MOSFET is commonly employed in power supply units, industrial motor control, and lighting applications. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 196mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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