R6020ANZC8
MOSFET N-CH 600V 20A TO3PFManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6020ANZC8 is a 600 V N-Channel MOSFET with a continuous drain current of 20A at 25°C (Tc). This through-hole component is housed in a TO-3PF package, offering a maximum power dissipation of 120W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600 V, a maximum on-resistance (Rds On) of 220mOhm at 10A and 10V Vgs, and a gate charge (Qg) of 65 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 2040 pF at 25 V. This MOSFET is suitable for applications requiring high voltage and current handling capabilities, often found in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.15V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
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