R6020ANZ8U7C8
MOSFET N-CH 600V 20A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6020ANZ8U7C8 is a 600V N-Channel Power MOSFET designed for high-voltage switching applications. This component features a continuous drain current capability of 20A at 25°C (Tc) and a maximum power dissipation of 120W (Tc). The Rds On is specified at a maximum of 220mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge of 65nC (max) at 10V and an input capacitance of 2040pF (max) at 25V. Housed in a TO-3PF package, this through-hole mounted device operates up to 150°C. It is suitable for use in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.15V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
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