R6020ANX
MOSFET N-CH 600V 20A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor R6020ANX is a 600V N-Channel Power MOSFET designed for high-voltage applications. This device features a continuous drain current rating of 20A at 25°C (Tc) and a maximum power dissipation of 85W (Tc). The Rds(on) is specified at a maximum of 220mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge of 65 nC (max) at 10V and an input capacitance (Ciss) of 2040 pF (max) at 25V. The MOSFET is housed in a TO-220FM package, facilitating through-hole mounting. Its operating temperature range extends to 150°C (TJ). This component is suitable for use in power supply units, lighting, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
