R6015KNX
MOSFET N-CH 600V 15A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6015KNX is an N-Channel power MOSFET featuring a 600V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 15A at 25°C. This device offers a maximum on-resistance (Rds On) of 290mOhm at 6.5A and 10V Vgs. With a gate charge (Qg) of 27.5 nC at 10V and input capacitance (Ciss) of 1050 pF at 25V, it is suitable for power conversion applications. The component has a maximum power dissipation of 60W (Tc) and operates within a temperature range of -55°C to 150°C. The R6015KNX is packaged in a TO-220FM (TO-220-3 Full Pack) through-hole configuration and is supplied in bulk packaging. This MOSFET is commonly utilized in power supplies and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
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