R6015ENX
MOSFET N-CH 600V 15A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor N-Channel MOSFET, R6015ENX, is a high-performance power transistor designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 15A at 25°C. With a maximum power dissipation of 40W (Tc) and an Rds On rating of 290mOhm at 6.5A and 10V, it offers efficient switching. The R6015ENX utilizes Metal Oxide technology and is housed in a TO-220FM package, suitable for through-hole mounting. Key electrical parameters include a Gate Charge (Qg) of 40 nC at 10V and an Input Capacitance (Ciss) of 910 pF at 25V. This device is engineered for operation up to 150°C (TJ) and is commonly found in power supply units and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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