R6015ANZFU7C8
MOSFET N-CH 600V 15A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel Power MOSFET, R6015ANZFU7C8, offers a 600V drain-source breakdown voltage and a continuous drain current capability of 15A at 25°C (Tc). This through-hole component features a low on-resistance of 300mOhms maximum at 7.5A and 10V Vgs, with a maximum gate charge of 50nC. The device supports a maximum gate-source voltage of ±30V and has a threshold voltage of 4.15V at 1mA. With a maximum power dissipation of 110W (Tc) and an operating junction temperature of 150°C, it is housed in a TO-3P-3 Full Pack package. This MOSFET is commonly utilized in power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.15V @ 1mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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