R6015ANX
MOSFET N-CH 600V 15A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6015ANX is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 15A at 25°C, this component offers robust power handling capabilities with a maximum power dissipation of 77W (Tc). The R6015ANX boasts a low on-resistance (Rds On) of 300mOhm at 7.5A and 10V, optimized for efficient switching. Key parameters include a gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 1700 pF at 25V. This device utilizes TO-220FM through-hole packaging, suitable for mounting in various power supply, industrial automation, and electric vehicle charging systems. The maximum operating junction temperature is 150°C, with a gate-source voltage (Vgs) tolerance of ±30V and a threshold voltage (Vgs(th)) of 4.5V at 1mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 77W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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