R6012ANX
MOSFET N-CH 600V 12A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6012ANX is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) capability of 12A at 25°C. With a maximum power dissipation of 50W (Tc), it is housed in a TO-220FM package with a through-hole mounting type. The Rds(On) is specified at 420mOhm maximum at 6A and 10V gate drive. Key parameters include a gate charge (Qg) of 35 nC maximum at 10V and an input capacitance (Ciss) of 1300 pF maximum at 25V. This device operates across a junction temperature range of 150°C (TJ). The R6012ANX is suitable for use in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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