R6011KNX
MOSFET N-CH 600V 11A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6011KNX is an N-Channel power MOSFET designed for demanding applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current rating of 11A at 25°C (Tc). The R6011KNX offers a maximum on-resistance (Rds On) of 390mOhm at 3.8A and 10V Vgs, with a gate charge (Qg) of 22 nC at 10V. It supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 5V at 1mA. The MOSFET has a maximum power dissipation of 53W (Tc) and an input capacitance (Ciss) of 740pF at 25V. Packaged in a TO-220FM (TO-220-3 Full Pack) with through-hole mounting, this component is suitable for use in power supply, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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