R6010ANX
MOSFET N-CH 600V 10A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's N-Channel MOSFET, Part Number R6010ANX, is designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 10A at 25°C in a TO-220FM package. With a maximum power dissipation of 50W (Tc), it is suitable for demanding power management tasks. The device operates at temperatures up to 150°C (TJ) and utilizes advanced MOSFET technology. Industries such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure commonly utilize this type of component for its robust performance and reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
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