R6009KNX
MOSFET N-CH 600V 9A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6009KNX is a 600V N-Channel power MOSFET designed for demanding applications. Featuring a continuous drain current capability of 9A at 25°C and a maximum power dissipation of 48W (Tc), this component is suitable for high-voltage power conversion and switching circuits across industrial and automotive sectors. The R6009KNX offers a low on-resistance of 535mOhm at 2.8A, 10V, and a gate charge of 16.5 nC at 10V, facilitating efficient switching performance. Its TO-220FM package ensures robust thermal management and reliable mounting. The device operates within a temperature range of -55°C to 150°C, with a ±20V maximum gate-source voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 535mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
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