R6009ENX
MOSFET N-CH 600V 9A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's R6009ENX is a 600V N-Channel Power MOSFET designed for high-voltage switching applications. This through-hole component, housed in a TO-220FM package, offers a continuous drain current of 9A (Tc) and a maximum power dissipation of 40W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a typical gate charge (Qg) of 23 nC at 10V, and input capacitance (Ciss) of 430 pF at 25V. The Rds On (Max) is specified at 535mOhm at 2.8A and 10V, with a threshold voltage (Vgs(th)) of 4V at 1mA. Operating temperature range is up to 150°C (TJ). This MOSFET is suitable for use in power supplies and general-purpose high-voltage switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 535mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
