R6008ANX
MOSFET N-CH 600V 8A TO-220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6008ANX is an N-Channel Power MOSFET designed for applications requiring high voltage and moderate current handling. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 8 A at 25°C (Tc). With a maximum power dissipation of 50 W (Tc), it is suitable for demanding power conversion and control circuits. The R6008ANX exhibits a typical Rds On of 800 mOhm at 4 A and 10 V, with a Gate Charge (Qg) of 21 nC at 10 V. It is supplied in a TO-220FM package for through-hole mounting, operating up to 150°C (TJ). This MOSFET is commonly utilized in power supplies, lighting control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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