R6007KNX
MOSFET N-CH 600V 7A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R6007KNX is a 600V N-Channel power MOSFET housed in a TO-220FM package. This device offers a continuous drain current of 7A at 25°C (Tc) and a maximum power dissipation of 46W (Tc). Key parameters include a Vgs(th) of 5V (max) @ 1mA, a gate charge of 14.5 nC @ 10V, and an input capacitance (Ciss) of 470 pF @ 25V. The Rds On (max) is specified at 620mOhm @ 2.4A, 10V. This MOSFET is suitable for applications requiring high voltage switching and power conversion, commonly found in industrial power supplies and automotive electronics. Operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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