R6006ANX
MOSFET N-CH 600V 6A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6006ANX is a 600V N-Channel power MOSFET designed for high-voltage switching applications. This component features a continuous drain current capability of 6A at 25°C (Tc) and a maximum power dissipation of 40W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 600V, a maximum Rds(on) of 1.2 Ohms at 3A and 10V, and a gate charge (Qg) of 15 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 520 pF at 25V. The R6006ANX operates at junction temperatures up to 150°C and is housed in a TO-220FM package with a through-hole mounting type. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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